All MOSFET. STW9N80K5 Datasheet

 

STW9N80K5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW9N80K5
   Marking Code: 9N80K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 5.7 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO247

 STW9N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW9N80K5 Datasheet (PDF)

 ..1. Size:791K  st
stp9n80k5 stw9n80k5.pdf

STW9N80K5
STW9N80K5

STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP9N80K5 800 V 0.90 7 A STW9N80K5 33 Industrys lowest R x area DS(on)221 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avala

 9.1. Size:132K  st
2sk2078 stw9na80.pdf

STW9N80K5
STW9N80K5

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 9.2. Size:125K  st
stw9na60.pdf

STW9N80K5
STW9N80K5

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

 9.3. Size:991K  st
stb9nk90z stf9nk90z stp9nk90z stw9nk90z.pdf

STW9N80K5
STW9N80K5

STB9NK90Z, STF9NK90ZSTP9NK90Z, STW9NK90ZN-channel 900 V, 1.1 , 8 A, TO-220, TO-220FP, D2PAK, TO-247Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax.331STB9NK90Z 160 W 21DPAKTO-220STW9NK90Z 160 W900V

 9.4. Size:668K  st
stp9nk70z stp9nk70zfp stb9nk70z stb9nk70z-1 stw9nk70z.pdf

STW9N80K5
STW9N80K5

STP9NK70Z - STP9NK70ZFPSTB9NK70Z - STB9NK70Z-1 - STW9NK70ZN-CHANNEL 700V - 1 - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP9NK70Z 700 V

 9.5. Size:279K  st
stw9nb80.pdf

STW9N80K5
STW9N80K5

STW9NB80N-CHANNEL 800V - 0.85 - 9.3A TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW9NB80 800V

 9.6. Size:307K  st
stw9nk95z.pdf

STW9N80K5
STW9N80K5

STW9NK95ZN-channel 950 V - 1.15 - 7 A - TO-247Zener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwMaxSTW9NK95Z 950 V

 9.7. Size:248K  st
stw9nc70z.pdf

STW9N80K5
STW9N80K5

STW9NC70ZN-CHANNEL 700V - 0.90 - 7.5A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC70Z 700 V

 9.8. Size:270K  st
stw9nb90.pdf

STW9N80K5
STW9N80K5

STW9NB90N-CHANNEL 900V - 0.85 - 9.7A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW9NB90 900 V

 9.9. Size:260K  st
stw9n150.pdf

STW9N80K5
STW9N80K5

STW9N150N-channel 1500 V - 1.8 - 8 A - TO-247very high voltage PowerMESH Power MOSFETFeaturesType VDSS RDS(on) ID PwSTW9N150 1500 V

 9.10. Size:132K  st
stw9na80.pdf

STW9N80K5
STW9N80K5

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 9.11. Size:248K  st
stw9nc80z.pdf

STW9N80K5
STW9N80K5

STW9NC80ZN-CHANNEL 800V - 0.82 - 9.4A TO-247Zener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTW9NC80Z 800 V

 9.12. Size:147K  njs
sth9na80fi stw9na80.pdf

STW9N80K5
STW9N80K5

 9.13. Size:305K  inchange semiconductor
stw9nk90z.pdf

STW9N80K5
STW9N80K5

iscN-Channel MOSFET Transistor STW9NK90ZFEATURESDrain Current : I =8A@ T =25D CDrain Source Voltage: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top