STW9N80K5 Specs and Replacement
Type Designator: STW9N80K5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO247
STW9N80K5 substitution
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STW9N80K5 datasheet
stp9n80k5 stw9n80k5.pdf
STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP9N80K5 800 V 0.90 7 A STW9N80K5 3 3 Industry s lowest R x area DS(on) 2 2 1 Industry s best FoM (figure of merit) 1 Ultra-low gate charge 100% avala... See More ⇒
2sk2078 stw9na80.pdf
STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒
stw9na60.pdf
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA60 600 V ... See More ⇒
stb9nk90z stf9nk90z stp9nk90z stw9nk90z.pdf
STB9NK90Z, STF9NK90Z STP9NK90Z, STW9NK90Z N-channel 900 V, 1.1 , 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max. 3 3 1 STB9NK90Z 160 W 2 1 D PAK TO-220 STW9NK90Z 160 W 900V ... See More ⇒
Detailed specifications: STW65N65DM2AG , STW65N80K5 , STW70N60DM2 , STW70N60DM6-4 , STW70N65M2 , STW74NF30 , STW75N60M6 , STW8N120K5 , IRF3710 , STWA20N95DK5 , STWA40N90K5 , STWA48N60DM2 , STWA48N60M2 , VQ1000J , VQ1000P , IRF830L , IRF840AL .
History: IRF820AS | HY3810PM | IRF822
Keywords - STW9N80K5 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRF820AS | HY3810PM | IRF822
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