All MOSFET. SI4447DY Datasheet

 

SI4447DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4447DY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: SO-8

 SI4447DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4447DY Datasheet (PDF)

 ..1. Size:103K  vishay
 si4447dy.pdf

SI4447DY SI4447DY

Si4447DYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition TrenchFET Power MOSFET0.054 at VGS = - 10 V - 4.5- 40 9 100 % Rg Tested0.072 at VGS = - 4.5 V - 3.9 100 % UIS TestedAPPLICATIONS CCFL InverterSO-8S S1 8 DS D2 7G S

 8.1. Size:266K  vishay
 si4447ady.pdf

SI4447DY SI4447DY

New ProductSi4447ADYVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.045 at VGS = - 10 V - 7.2 TrenchFET Power MOSFET- 40 11.8 nC0.062 at VGS = - 4.5 V - 6.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPL

 8.2. Size:859K  cn vbsemi
 si4447ady.pdf

SI4447DY SI4447DY

SI4447ADYwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1

 9.1. Size:221K  vishay
 si4442dy.pdf

SI4447DY SI4447DY

Si4442DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0045 at VGS = 10 V 22 TrenchFET Power MOSFETs: 2.5 V Rated0.005 at VGS = 4.5 V 30 19 100 % Rg Tested 0.0075 at VGS = 2.5 V 17DSO-8 S 1 8 D 2 7 S D G3 6 S D G 4 5 D Top View S

 9.2. Size:262K  vishay
 si4446dy.pdf

SI4447DY SI4447DY

New ProductSi4446DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 5.2 TrenchFET Power MOSFET40 80.045 at VGS = 4.5 V 4.9 100 % Rg 100 % Rg UIS TestedAPPLICATIONS CCFL InverterSO-8S D1 8 DS D2 7S3 6 D

 9.3. Size:235K  vishay
 si4448dy.pdf

SI4447DY SI4447DY

Si4448DYVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0017 at VGS = 4.5 V 50 TrenchFET Power MOSFET0.002 at VGS = 2.5 V 12 46 56 nC 100 % Rg Tested0.0027 at VGS = 1.8 V 40 100 % UIS TestedAPPLICATIONS POL DC/DCSO-8D

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