SI4925BDY MOSFET Datasheet: P-Ch, 30V, 5.3A. Full specification with pinout and replacement list

SI4925BDY Specs and Replacement

Type Designator: SI4925BDY

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO-8

SI4925BDY substitution

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SI4925BDY datasheet

..1. Size:246K vishay
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Si4925BDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = - 10 V - 7.1 TrenchFET Power MOSFET - 30 0.041 at VGS = - 4.5 V - 5.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches - Notebook PCs - Desktop PCs - Game S... See More ⇒

8.1. Size:240K vishay
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New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 8 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.041 at VGS = - 4.5 V - 8 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2 SO-... See More ⇒

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8.3. Size:72K vishay
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Si4925DY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) Pb-free 0.032 @ VGS = -10 V -6.3 Available -30 30 0.045 @ VGS = -4.5 V -5.3 SO-8 S1 S2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 Top View D1 D2 Ordering Information Si4925DY Si4925DY-T1 (with Tape and Reel) P-Channel MOSFET P-Cha... See More ⇒