All MOSFET. SI7113ADN Datasheet

 

SI7113ADN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7113ADN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.9 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
   Package: POWERPAK-1212-8

 SI7113ADN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7113ADN Datasheet (PDF)

 ..1. Size:252K  vishay
si7113adn.pdf

SI7113ADN
SI7113ADN

Si7113ADNwww.vishay.comVishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization: for definitions of compliance please seewww.vishay.com/doc?9991211APPLICATIONSS2SS3S Active clamp in intermediate DC/DC4S1power suppliesG

 8.1. Size:542K  vishay
si7113dn.pdf

SI7113ADN
SI7113ADN

Si7113DNVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.134 at VGS = - 10 V - 13.2e Low Thermal Resistance PowerPAKRoHS- 100 16.5 nCPackage with Small Size and Low 1.07 mm COMPLIANT0.145 at VGS = - 4.5V - 12.7eProfile UIS and Rg Tested

 9.1. Size:575K  vishay
si7114adn.pdf

SI7113ADN
SI7113ADN

New ProductSi7114ADNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFETRoHS 100 % Rg Tested0.0075 at VGS = 10 V 35COMPLIANT 30 10.2 nC 100 % UIS Tested0.0098 at VGS = 4.5 V 35APPLICATIONSPowerPAK 1212-8 Synchronous RectificationS3.30

 9.2. Size:532K  vishay
si7110dn.pdf

SI7113ADN
SI7113ADN

Si7110DNVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET0.0053 at VGS = 10 V RoHS21.120 14 nC New Low Thermal Resistance PowerPAK COMPLIANT 0.0078 at VGS = 4.5 V 17.4Package with Low 1.07 mm Profile PWM Optimized

 9.3. Size:547K  vishay
si7115dn.pdf

SI7113ADN
SI7113ADN

Si7115DNVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.295 at VGS = - 10 V - 8.9e Low Thermal Resistance PowerPAK- 150 23.2 nC0.315 at VGS = - 6 V - 8.6ePackage with Small Size and Low 1 mm Profile 100 % Rg and UI

 9.4. Size:549K  vishay
si7112dn.pdf

SI7113ADN
SI7113ADN

Si7112DNVishay SiliconixN-Channel 30 V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () DefinitionID (A) TrenchFET Power MOSFET0.0075 at VGS = 10 V 17.830 New Low Thermal Resistance PowerPAK 0.0082 at VGS = 4.5 V 17.0Package with Low 1.07 mm Profile 100 % Rg Tested Complia

 9.5. Size:555K  vishay
si7117dn.pdf

SI7113ADN
SI7113ADN

Si7117DNVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFETs1.2 at VGS = - 10 V - 2.17- 150 7.7 nC PowerPAK Package1.3 at VGS = - 6 V - 2.1- Low Thermal Resistance- Low 1.07 mm Profile Compliant to RoHS Directive 2002/

 9.6. Size:532K  vishay
si7116dn.pdf

SI7113ADN
SI7113ADN

Si7116DNVishay SiliconixN-Channel 40-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.0078 at VGS = 10 V RoHS16.440 15 nC COMPLIANT New Low Thermal Resistance PowerPAK 0.010 at VGS = 4.5 V 14.5Package with Low 1.07 mm Profile PWM Optimized 100 %

 9.7. Size:532K  vishay
si7114dn.pdf

SI7113ADN
SI7113ADN

Si7114DNVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET0.0075 at VGS = 10 V RoHS 18.330 12.5 COMPLIANT New Low Thermal Resistance PowerPAK 0.010 at VGS = 4.5 V 15.9Package with Low 1.07 mm Profile 100 % Rg TestedA

 9.8. Size:564K  vishay
si7119dn.pdf

SI7113ADN
SI7113ADN

Si7119DNVishay SiliconixP-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available1.05 at VGS = - 10 V - 3.8e TrenchFET Power MOSFET- 200 10.6 nC Low Thermal Resistance PowerPAK1.10 at VGS = - 6.0V - 3.6ePackage with Small Size and Low 1.07 mm Profile 100 % UIS and

 9.9. Size:572K  vishay
si7114ad.pdf

SI7113ADN
SI7113ADN

New ProductSi7114ADNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFETRoHS 100 % Rg Tested0.0075 at VGS = 10 V 35COMPLIANT 30 10.2 nC 100 % UIS Tested0.0098 at VGS = 4.5 V 35APPLICATIONSPowerPAK 1212-8 Synchronous RectificationS3.30

 9.10. Size:2595K  kexin
si7119dn.pdf

SI7113ADN
SI7113ADN

SMD Type MOSFETP-Channel MOSFETSI7119DN (KI7119DN) Features VDS (V) =-200V ID =-3.8 A (VGS =-10V) RDS(ON) 1.05 (VGS =-10V) RDS(ON) 1.1 (VGS =-6V)SG PowerPAK 1212-8 (QFN5X6)S 3.30 mm 3.30 mm 1 S 2 S 3 G D4 D 8 D 7 D 6 D 5 Bottom View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dra

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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