All MOSFET. SI7900AEDN Datasheet

 

SI7900AEDN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7900AEDN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 1.3 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: POWERPAK-1212-8

 SI7900AEDN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7900AEDN Datasheet (PDF)

 ..1. Size:532K  vishay
 si7900aedn.pdf

SI7900AEDN SI7900AEDN

Si7900AEDNVishay SiliconixDual N-Channel 20-V (D-S) MOSFET, Common DrainFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET: 1.8 V Rated0.026 at VGS = 4.5 V 8.5 New PowerPak Package RoHS0.030 at VGS = 2.5 V 20 8COMPLIANT- Low Thermal Resistance, RthJC0.036 at VGS = 1.8 V 7- Low 1.07 mm Profile

 9.1. Size:553K  vishay
 si7904bd.pdf

SI7900AEDN SI7900AEDN

Si7904BDNVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.030 at VGS = 4.5 V 6 TrenchFET Power MOSFET0.036 at VGS = 2.5 V 20 69 nCAPPLICATIONS0.045 at VGS = 1.8 V 6 HDD Spindle DrivePowerPAK 1212-8S1 3.30 mm 3.30 mm 1 D1 D2G

 9.2. Size:551K  vishay
 si7905dn.pdf

SI7900AEDN SI7900AEDN

Si7905DNVishay SiliconixDual P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.060 at VGS = - 10 V - 6e Low Thermal Resistance PowerPAK- 40 11 nC0.089 at VGS = - 4.5V - 5fPackage with Small Size and Low 1.07 mm Profile 100 % Rg and

 9.3. Size:534K  vishay
 si7904dn.pdf

SI7900AEDN SI7900AEDN

Si7904DNVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS: 1.8 V Rated0.030 at VGS = 4.5 V 7.7 New Low Thermal Resistance PowerPAK RoHSCOMPLIANT0.036 at VGS = 2.5 V 20 7.0Package with Low 1.07 mm Profile0.045 at VGS = 1.8 V 6.3APPLICATIONS

 9.4. Size:539K  vishay
 si7909dn.pdf

SI7900AEDN SI7900AEDN

Si7909DNVishay SiliconixDual P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS: 1.8 V Rated0.037 at VGS = - 4.5 V - 7.7 New Low Thermal Resistance PowerPAK RoHSPackage COMPLIANT0.048 at VGS = - 2.5 V - 6.8- 12 Advanced High Cell Density Process0.068 at VGS = - 1.8

 9.5. Size:554K  vishay
 si7904bdn.pdf

SI7900AEDN SI7900AEDN

Si7904BDNVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.030 at VGS = 4.5 V 6 TrenchFET Power MOSFET0.036 at VGS = 2.5 V 20 69 nCAPPLICATIONS0.045 at VGS = 1.8 V 6 HDD Spindle DrivePowerPAK 1212-8S1 3.30 mm 3.30 mm 1 D1 D2G

 9.6. Size:563K  vishay
 si7901edn.pdf

SI7900AEDN SI7900AEDN

Si7901EDNVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.048 at VGS = - 4.5 V - 6.3 TrenchFET Power MOSFETS: 1.8 V Rated ESD Protected: 4500 V0.068 at VGS = - 2.5 V - 20 - 5.3 Ultra Low Thermal Resistance PowerPAK0.090 at VGS = - 1.8 V - 4.6P

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top