SI7900AEDN MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

SI7900AEDN Specs and Replacement

Type Designator: SI7900AEDN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.3 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: POWERPAK-1212-8

SI7900AEDN substitution

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SI7900AEDN datasheet

..1. Size:532K vishay
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Si7900AEDN Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 1.8 V Rated 0.026 at VGS = 4.5 V 8.5 New PowerPak Package RoHS 0.030 at VGS = 2.5 V 20 8 COMPLIANT - Low Thermal Resistance, RthJC 0.036 at VGS = 1.8 V 7 - Low 1.07 mm Profile ... See More ⇒

9.1. Size:553K vishay
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Si7904BDN Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.030 at VGS = 4.5 V 6 TrenchFET Power MOSFET 0.036 at VGS = 2.5 V 20 6 9 nC APPLICATIONS 0.045 at VGS = 1.8 V 6 HDD Spindle Drive PowerPAK 1212-8 S1 3.30 mm 3.30 mm 1 D1 D2 G... See More ⇒

9.2. Size:551K vishay
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Si7905DN Vishay Siliconix Dual P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.060 at VGS = - 10 V - 6e Low Thermal Resistance PowerPAK - 40 11 nC 0.089 at VGS = - 4.5V - 5f Package with Small Size and Low 1.07 mm Profile 100 % Rg and ... See More ⇒

9.3. Size:534K vishay
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