SI8823EDB Datasheet and Replacement
Type Designator: SI8823EDB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: MICRO-FOOT0.8X0.8
SI8823EDB substitution
SI8823EDB Datasheet (PDF)
si8823edb.pdf

Si8823EDBwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMICRO FOOT 0.8 x 0.8S TrenchFET Gen III p-channel power MOSFET22SS Compact 0.8 mm x 0.8 mm outline area33 Low 0.4 mm max. profile RDS(on) rating at VGS = -1.5 V Typical ESD protection: 1900 V HBM11GG Material categorization: for definitions of compliance 4
si8824edb.pdf

Si8824EDBwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Ultra small 0.8 mm x 0.8 mm outline0.075 at VGS = 4.5 V 2.9 Ultra thin 0.357 mm height0.082 at VGS = 2.5 V 2.7 Typical ESD protection 2000 V (HBM)20 0.090 at VGS = 1.8 V 2.6 2.7 nC Material categ
Datasheet: SI4966DY , SI5948DU , SI7113ADN , SI7153DN , SI7218DN , SI7615CDN , SI7900AEDN , SI7972DP , SKD502T , SI8824EDB , SI8902AEDB , SIA445EDJT , SIA465EDJ , SIA468DJ , SIA469DJ , SIA472EDJ , SIA918EDJ .
History: RU20P3C | SWD70N10V | RD3L080SN | SQM100N04-2M7 | SWD088R08E8T | 2N3460 | PV5G3EA
Keywords - SI8823EDB MOSFET datasheet
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History: RU20P3C | SWD70N10V | RD3L080SN | SQM100N04-2M7 | SWD088R08E8T | 2N3460 | PV5G3EA



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