SIA465EDJ MOSFET Datasheet: P-Ch, 20V, 12A. Full specification with pinout and replacement list

SIA465EDJ Specs and Replacement

Type Designator: SIA465EDJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: SOT-363 SC-70-6

SIA465EDJ substitution

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SIA465EDJ datasheet

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SiA469DJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SC-70-6L Single D TrenchFET Gen III p-channel power MOSFET D 6 Thermally enhanced PowerPAK SC-70 package S 5 4 100% Rg tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S 1 7 2 D APPLICATIONS 3 D S 1 G Load ... See More ⇒

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SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.0095 at VGS = 10 V 25 - Small footprint area 20 0.0111 at VGS = 6 V 25 6.3 nC - Low on-resistance 0.0130 at VGS = 4.5 V 25 Typical ESD protection 2500 V (HBM) ... See More ⇒

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New Product SiA462DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.018 at VGS = 10 V Material categorization 12 For definitions of compliance please see 0.020 at VGS = 6 V 30 12 5 nC www.vishay.com/doc?99912 0.022 at VGS = 4.5 V 12 APPLICATIONS ... See More ⇒