SIHA21N60EF MOSFET Datasheet: N-Ch, 600V, 21A. Full specification with pinout and replacement list

SIHA21N60EF Specs and Replacement

Type Designator: SIHA21N60EF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.176 Ohm

Package: TO-220F

SIHA21N60EF substitution

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SIHA21N60EF datasheet

..1. Size:155K vishay
siha21n60ef.pdf pdf_icon

SiHA21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES D Thin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg G Low input capacitance (Ciss) Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en... See More ⇒

9.1. Size:104K vishay
siha22n60ael.pdf pdf_icon

SiHA22N60AEL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S please see www.vishay.com/doc?999... See More ⇒

9.2. Size:171K vishay
siha22n60e.pdf pdf_icon

SiHA22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 24 ... See More ⇒

9.3. Size:164K vishay
siha25n50e.pdf pdf_icon

SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.145 Reduced switching and conduction losses Qg (Max.) (nC) 86 Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 Avalanche energy rated (UIS) Config... See More ⇒