All MOSFET. SIHA21N60EF Datasheet

 

SIHA21N60EF Datasheet and Replacement


   Type Designator: SIHA21N60EF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.176 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

SIHA21N60EF Datasheet (PDF)

 ..1. Size:155K  vishay
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SIHA21N60EF

SiHA21N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESDThin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x QgG Low input capacitance (Ciss)Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en

 9.1. Size:104K  vishay
siha22n60ael.pdf pdf_icon

SIHA21N60EF

SiHA22N60AELwww.vishay.comVishay SiliconixEL Series Power MOSFETFEATURESDThin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance Splease see www.vishay.com/doc?999

 9.2. Size:171K  vishay
siha22n60e.pdf pdf_icon

SIHA21N60EF

SiHA22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 24

 9.3. Size:164K  vishay
siha25n50e.pdf pdf_icon

SIHA21N60EF

SiHA25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT

Keywords - SIHA21N60EF MOSFET datasheet

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