SIHG17N80E MOSFET Datasheet: N-Ch, 800V, 15A. Full specification with pinout and replacement list

SIHG17N80E Specs and Replacement

Type Designator: SIHG17N80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO-247AC

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SIHG17N80E datasheet

..1. Size:123K vishay
sihg17n80e.pdf pdf_icon

SiHG17N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?99912 G N-Chann... See More ⇒

7.1. Size:187K vishay
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SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS... See More ⇒

9.1. Size:178K vishay
sihg14n50d.pdf pdf_icon

SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.4 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 58 - Reduced Capacitive Switching Losses Qgs (nC) 8 - High Body Diode Ruggedness Qgd (nC) 14 - Avalanche Energy Rated (UIS) ... See More ⇒

9.2. Size:142K vishay
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SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET ... See More ⇒

Detailed specifications: SIA469DJ, SIA472EDJ, SIA918EDJ, SIA923AEDJ, SIHA21N60EF, SIHA22N60AE, SIHA22N60AEL, SIHD4N80E, IRFB31N20D, SIHG70N60EF, SIHH180N60E, SIHH27N60EF, SIHP11N80E, SIHP120N60E, SIHP17N80E, SIHP25N60EFL, SIR164ADP

Keywords - SIHG17N80E MOSFET specs

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