SIHG17N80E - аналоги, параметры транзистора - Справочник транзисторов

SIHG17N80E даташит

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SiHG17N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?99912 G N-Chann

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SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS

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SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.4 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 58 - Reduced Capacitive Switching Losses Qgs (nC) 8 - High Body Diode Ruggedness Qgd (nC) 14 - Avalanche Energy Rated (UIS)

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SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET

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