All MOSFET. SIHP25N60EFL Datasheet

 

SIHP25N60EFL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHP25N60EFL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm
   Package: TO-220AB

 SIHP25N60EFL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHP25N60EFL Datasheet (PDF)

 ..1. Size:138K  vishay
sihp25n60efl.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP25N60EFLwww.vishay.comVishay SiliconixE Series Power MOSFET with Fast Body Diode and Low Gate ChargeFEATURESPRODUCT SUMMARY Reduced figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 650 Fast body diode MOSFET using E series RDS(on) typ. () at 25 C VGS = 10 V 0.127technologyQg (Max.) (nC) 75 Reduced trr, Qrr, and IRRMQgs (nC) 17 Increased robust

 7.1. Size:208K  vishay
sihp25n40d.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP25N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.17- Low Input Capacitance (Ciss)Qg max. (nC) 88- Reduced Capacitive Switching LossesQgs (nC) 12 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 23

 7.2. Size:158K  vishay
sihp25n50e.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

 9.1. Size:165K  vishay
sihp28n65e.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP28N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.122 Reduced switching and conduction lossesQg max. (nC) 140 Ultra low gate charge (Qg)Qgs (nC) 21 Avalanche energy rated (UIS)Qgd (nC) 37

 9.2. Size:158K  vishay
sihp20n50e.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

 9.3. Size:158K  vishay
sihp28n60ef.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switc

 9.4. Size:209K  vishay
sihp24n65e.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP24N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced Switching and Conduction LossesQg max. (nC) 122 Ultra Low Gate Charge (Qg)Qgs (nC) 21 Avalanche Energy Rated (UIS)Qgd (nC) 37

 9.5. Size:167K  vishay
sihp23n60e.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16Qgd (nC) 25 Avalanche energy rated (UIS)Con

 9.6. Size:167K  vishay
sihp22n65e.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction losses AvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) Availab

 9.7. Size:207K  vishay
sihp22n60e.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

 9.8. Size:210K  vishay
sihp22n60s.pdf

SIHP25N60EFL
SIHP25N60EFL

SiHP22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF640N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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