SIHP25N60EFL MOSFET PDF: N-Ch, 600V, 25A. Full specification with pinout and replacement list

SIHP25N60EFL PDF Specs and Replacement

   Type Designator: SIHP25N60EFL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm
   Package: TO-220AB

SIHP25N60EFL substitution

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SIHP25N60EFL PDF Specs

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SiHP25N60EFL www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES PRODUCT SUMMARY Reduced figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Fast body diode MOSFET using E series RDS(on) typ. ( ) at 25 C VGS = 10 V 0.127 technology Qg (Max.) (nC) 75 Reduced trr, Qrr, and IRRM Qgs (nC) 17 Increased robust... See More ⇒

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SiHP25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.145 Reduced switching and conduction losses Qg (Max.) (nC) 86 Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 Avalanche energy rated (UIS) Config... See More ⇒

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