SIR610DP Datasheet. Specs and Replacement

Type Designator: SIR610DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 142 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0319 Ohm

Package: SO-8

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SIR610DP datasheet

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SIR610DP

SiR610DP www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D ThunderFET technology optimizes balance D 8 of RDS(on), Qg, Qsw and Qoss D 7 D 6 100 % Rg and UIS tested 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS D 4 S 1 G Fixed telecom Top V... See More ⇒

Detailed specifications: SIHH180N60E, SIHH27N60EF, SIHP11N80E, SIHP120N60E, SIHP17N80E, SIHP25N60EFL, SIR164ADP, SIR182DP, AON7403, SIR624DP, SIR626DP, SIR638DP, SIR680DP, SIR688DP, SIR690DP, SIR871DP, SIR873DP

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