SIR610DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR610DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 142 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0319 Ohm
Package: SO-8
SIR610DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR610DP Datasheet (PDF)
..1. Size:410K vishay
sir610dp.pdf
sir610dp.pdf
SiR610DPwww.vishay.comVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD ThunderFET technology optimizes balanceD 8of RDS(on), Qg, Qsw and QossD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 SAPPLICATIONS D4 S1G Fixed telecomTop V
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