All MOSFET. SIR610DP Datasheet

 

SIR610DP Datasheet and Replacement


   Type Designator: SIR610DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0319 Ohm
   Package: SO-8
 

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SIR610DP Datasheet (PDF)

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SIR610DP

SiR610DPwww.vishay.comVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD ThunderFET technology optimizes balanceD 8of RDS(on), Qg, Qsw and QossD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 SAPPLICATIONS D4 S1G Fixed telecomTop V

Datasheet: SIHH180N60E , SIHH27N60EF , SIHP11N80E , SIHP120N60E , SIHP17N80E , SIHP25N60EFL , SIR164ADP , SIR182DP , EMB04N03H , SIR624DP , SIR626DP , SIR638DP , SIR680DP , SIR688DP , SIR690DP , SIR871DP , SIR873DP .

History: RU6075R | MTB40P06V8 | SMN09L20D | NCE3008Y | SRM6N60TF | NCEP033N85D | IPP080N06NG

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