SIR680DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR680DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
|Id|ⓘ - Maximum Drain Current: 32.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 69.5 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: SO-8
SIR680DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR680DP Datasheet (PDF)
sir680dp.pdf
SiR680DPwww.vishay.comVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Very low RDS - Qg figure-of-merit (FOM)D 65 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization: for definitions of 1compliance please see www.vishay.com/doc?999122 S3 S4 S1
sir688dp.pdf
SiR688DPVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0035 at VGS = 10 V 60 Low Qg for High Efficiency60 0.0045 at VGS = 6 V 60 20.5 nC Material categorization:For definitions of compliance please see0.0060 at VGS = 4.5 V 60www.vishay.co
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
