All MOSFET. SIR680DP Datasheet

 

SIR680DP Datasheet and Replacement


   Type Designator: SIR680DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: SO-8
 

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SIR680DP Datasheet (PDF)

 ..1. Size:402K  vishay
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SIR680DP

SiR680DPwww.vishay.comVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Very low RDS - Qg figure-of-merit (FOM)D 65 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization: for definitions of 1compliance please see www.vishay.com/doc?999122 S3 S4 S1

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SIR680DP

SiR688DPVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0035 at VGS = 10 V 60 Low Qg for High Efficiency60 0.0045 at VGS = 6 V 60 20.5 nC Material categorization:For definitions of compliance please see0.0060 at VGS = 4.5 V 60www.vishay.co

Datasheet: SIHP17N80E , SIHP25N60EFL , SIR164ADP , SIR182DP , SIR610DP , SIR624DP , SIR626DP , SIR638DP , 2N7002 , SIR688DP , SIR690DP , SIR871DP , SIR873DP , SIRA01DP , SIRA10BDP , SIRA12BDP , SIRA14BDP .

History: SIHA11N80E | FQU1N80

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