SIR680DP Datasheet. Specs and Replacement

Type Designator: SIR680DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: SO-8

SIR680DP substitution

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SIR680DP datasheet

 ..1. Size:402K  vishay
 sir680dp.pdf pdf_icon

SIR680DP

SiR680DP www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Very low RDS - Qg figure-of-merit (FOM) D 6 5 Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Material categorization for definitions of 1 compliance please see www.vishay.com/doc?99912 2 S 3 S 4 S 1... See More ⇒

 9.1. Size:323K  vishay
 sir688dp.pdf pdf_icon

SIR680DP

SiR688DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0035 at VGS = 10 V 60 Low Qg for High Efficiency 60 0.0045 at VGS = 6 V 60 20.5 nC Material categorization For definitions of compliance please see 0.0060 at VGS = 4.5 V 60 www.vishay.co... See More ⇒

Detailed specifications: SIHP17N80E, SIHP25N60EFL, SIR164ADP, SIR182DP, SIR610DP, SIR624DP, SIR626DP, SIR638DP, MMIS60R580P, SIR688DP, SIR690DP, SIR871DP, SIR873DP, SIRA01DP, SIRA10BDP, SIRA12BDP, SIRA14BDP

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