SIRA32DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIRA32DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 51 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: SO-8
SIRA32DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIRA32DP Datasheet (PDF)
sira32dp.pdf
SiRA32DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reducesD 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions ofcompliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS D
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