SIRA32DP Datasheet. Specs and Replacement

Type Designator: SIRA32DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 1320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: SO-8

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SIRA32DP datasheet

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SIRA32DP

SiRA32DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS D... See More ⇒

Detailed specifications: SIR873DP, SIRA01DP, SIRA10BDP, SIRA12BDP, SIRA14BDP, SIRA18ADP, SIRA24DP, SIRA26DP, IRF540N, SIRA52DP, SIRA60DP, SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, SIRA96DP

Keywords - SIRA32DP MOSFET specs

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