All MOSFET. SIRA32DP Datasheet

 

SIRA32DP Datasheet and Replacement


   Type Designator: SIRA32DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: SO-8
 

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SIRA32DP Datasheet (PDF)

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SIRA32DP

SiRA32DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reducesD 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions ofcompliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS D

Datasheet: SIR873DP , SIRA01DP , SIRA10BDP , SIRA12BDP , SIRA14BDP , SIRA18ADP , SIRA24DP , SIRA26DP , IRF540 , SIRA52DP , SIRA60DP , SIRA64DP , SIRA66DP , SIRA72DP , SIRA84DP , SIRA88DP , SIRA96DP .

History: NP180N04TUJ | SRT10N160LD

Keywords - SIRA32DP MOSFET datasheet

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