SIRA64DP Datasheet. Specs and Replacement

Type Designator: SIRA64DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: SO-8

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SIRA64DP datasheet

 ..1. Size:189K  vishay
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SIRA64DP

SiRA64DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Optimized Qg, Qgd, and Qgd/Qgs ratio D 6 reduces switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance 1 please see www.vishay.com/doc?99912 2 S 3 S 4 S 1 APP... See More ⇒

 9.1. Size:324K  vishay
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SIRA64DP

SiRA66DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0023 at VGS = 10 V Material categorization 50 30 19.2 nC For definitions of compliance please see 0.0031 at VGS = 4.5 V 50 www.vishay.com/doc?99912 APPLICATIONS PowerPAK SO-8... See More ⇒

 9.2. Size:407K  vishay
 sira60dp.pdf pdf_icon

SIRA64DP

SiRA60DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) a, g Qg (Typ.) 100 % Rg and UIS tested 0.00094 at VGS = 10 V 100 30 38 nC Material categorization 0.00135 at VGS = 4.5 V 100 for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SO-8 ... See More ⇒

Detailed specifications: SIRA12BDP, SIRA14BDP, SIRA18ADP, SIRA24DP, SIRA26DP, SIRA32DP, SIRA52DP, SIRA60DP, IRFP460, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, SIRA96DP, SIS472BDN, SIS488DN, SISA01DN

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