All MOSFET. SIRA64DP Datasheet

 

SIRA64DP Datasheet and Replacement


   Type Designator: SIRA64DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: SO-8
 

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SIRA64DP Datasheet (PDF)

 ..1. Size:189K  vishay
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SIRA64DP

SiRA64DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Optimized Qg, Qgd, and Qgd/Qgs ratio D 6reduces switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance 1please see www.vishay.com/doc?999122 S3 S4 S1APP

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SIRA64DP

SiRA66DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0023 at VGS = 10 V Material categorization:5030 19.2 nCFor definitions of compliance please see0.0031 at VGS = 4.5 V 50www.vishay.com/doc?99912APPLICATIONSPowerPAK SO-8

 9.2. Size:407K  vishay
sira60dp.pdf pdf_icon

SIRA64DP

SiRA60DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 100 % Rg and UIS tested0.00094 at VGS = 10 V 10030 38 nC Material categorization:0.00135 at VGS = 4.5 V 100for definitions of compliance please seewww.vishay.com/doc?99912PowerPAK SO-8

Datasheet: SIRA12BDP , SIRA14BDP , SIRA18ADP , SIRA24DP , SIRA26DP , SIRA32DP , SIRA52DP , SIRA60DP , IRF640 , SIRA66DP , SIRA72DP , SIRA84DP , SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN .

History: IPP070N06NG | WSK140N08 | SML50B26 | SI5853 | IPI80N04S2-H4 | IRL3714S | SJMN380R65MF

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