SIRA72DP Datasheet. Specs and Replacement

Type Designator: SIRA72DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 455 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: SO-8

SIRA72DP substitution

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SIRA72DP datasheet

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SIRA72DP

SiRA72DP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 Tuned for the lowest RDS-Qoss FOM D 6 5 100 % Rg and UIS tested Qgd/Qgs ratio ... See More ⇒

Detailed specifications: SIRA18ADP, SIRA24DP, SIRA26DP, SIRA32DP, SIRA52DP, SIRA60DP, SIRA64DP, SIRA66DP, IRF640, SIRA84DP, SIRA88DP, SIRA96DP, SIS472BDN, SIS488DN, SISA01DN, SISA24DN, SISA66DN

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