SIRA72DP Datasheet and Replacement
Type Designator: SIRA72DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 455 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: SO-8
SIRA72DP substitution
SIRA72DP Datasheet (PDF)
sira72dp.pdf

SiRA72DPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 Tuned for the lowest RDS-Qoss FOM D 65 100 % Rg and UIS tested Qgd/Qgs ratio
Datasheet: SIRA18ADP , SIRA24DP , SIRA26DP , SIRA32DP , SIRA52DP , SIRA60DP , SIRA64DP , SIRA66DP , IRFZ44 , SIRA84DP , SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN .
History: NTPF360N80S3Z | RSD160P05
Keywords - SIRA72DP MOSFET datasheet
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History: NTPF360N80S3Z | RSD160P05



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