All MOSFET. SIRA88DP Datasheet

 

SIRA88DP Datasheet and Replacement


   Type Designator: SIRA88DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: SO-8
 

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SIRA88DP Datasheet (PDF)

 ..1. Size:394K  vishay
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SIRA88DP

SiRA88DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 6 Material categorization: 5for definitions of compliance please see www.vishay.com/doc?999121APPLICATIONS2 SD3 S DC/DC conversion4 S1G Battery protectionTop View Bottom V

 9.1. Size:405K  vishay
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SIRA88DP

SiRA84DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Tuned for reducing transient spikesD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 S APPLICATIONS D4 S1 Synchronous buck convert

Datasheet: SIRA26DP , SIRA32DP , SIRA52DP , SIRA60DP , SIRA64DP , SIRA66DP , SIRA72DP , SIRA84DP , IRFP260N , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , SISA88DN .

History: STD155N3H6 | APT50M80LVRG | 2SK1377 | 2SK2002-01M | AOD442G | UT100N03L-TM3-T | AP6800EY

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