All MOSFET. SIRA88DP Datasheet

 

SIRA88DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIRA88DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 16.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.8 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: SO-8

 SIRA88DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIRA88DP Datasheet (PDF)

 ..1. Size:394K  vishay
 sira88dp.pdf

SIRA88DP SIRA88DP

SiRA88DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 6 Material categorization: 5for definitions of compliance please see www.vishay.com/doc?999121APPLICATIONS2 SD3 S DC/DC conversion4 S1G Battery protectionTop View Bottom V

 9.1. Size:405K  vishay
 sira84dp.pdf

SIRA88DP SIRA88DP

SiRA84DPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Tuned for reducing transient spikesD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 S APPLICATIONS D4 S1 Synchronous buck convert

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