SISA24DN Datasheet. Specs and Replacement

Type Designator: SISA24DN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 1420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm

Package: POWERPAK-1212-8

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SISA24DN datasheet

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SISA24DN

SiSA24DN www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET Gen IV power MOSFET D 8 D Optimized Qg, Qgd, and Qgd/Qgs ratio reduces 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 S S 3 APP... See More ⇒

Detailed specifications: SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP, SIRA96DP, SIS472BDN, SIS488DN, SISA01DN, IRFB4227, SISA66DN, SISA72DN, SISA88DN, SISA96DN, SISB46DN, SISS27ADN, SISS27DN, SISS98DN

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