All MOSFET. SISA24DN Datasheet

 

SISA24DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SISA24DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 22.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: POWERPAK-1212-8

 SISA24DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SISA24DN Datasheet (PDF)

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 sisa24dn.pdf

SISA24DN SISA24DN

SiSA24DNwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D Optimized Qg, Qgd, and Qgd/Qgs ratio reduces 7D6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912112SS3APP

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSS4N60

 

 
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