All MOSFET. SISA24DN Datasheet

 

SISA24DN Datasheet and Replacement


   Type Designator: SISA24DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: POWERPAK-1212-8
 

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SISA24DN Datasheet (PDF)

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SISA24DN

SiSA24DNwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D Optimized Qg, Qgd, and Qgd/Qgs ratio reduces 7D6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912112SS3APP

Datasheet: SIRA66DP , SIRA72DP , SIRA84DP , SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , AON6414A , SISA66DN , SISA72DN , SISA88DN , SISA96DN , SISB46DN , SISS27ADN , SISS27DN , SISS98DN .

History: RD30HVF1 | JSM6435 | SIHD4N80E | SIRA18ADP | KIA2806A | IRL520LPBF | NP100N04PUH

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