All MOSFET. SISA66DN Datasheet

 

SISA66DN Datasheet and Replacement


   Type Designator: SISA66DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 1032 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: POWERPAK-1212-8
 

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SISA66DN Datasheet (PDF)

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SISA66DN

SiSA66DNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912112SSDAPPLICATIONS3S4S1 Personal computers and serversGTop View Botto

Datasheet: SIRA72DP , SIRA84DP , SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , P55NF06 , SISA72DN , SISA88DN , SISA96DN , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED .

History: HSM3002 | SSF7NS70UGX | IPI65R380C6 | SSF7509A | KMB6D6N30Q | NP16N06YLL | SI6404DQ

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