SISA72DN Datasheet and Replacement
Type Designator: SISA72DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 455 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: POWERPAK-1212-8
SISA72DN substitution
SISA72DN Datasheet (PDF)
sisa72dn.pdf

SiSA72DNwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) f, g Qg (TYP.) 100 % Rg and UIS tested0.0035 at VGS = 10 V 6040 19.5 nC0.0048 at VGS = 4.5 V 60 Tuned for the lowest RDS-Qoss FOM Material categorization:for definitions of compliance please see P
Datasheet: SIRA84DP , SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , IRFB4227 , SISA88DN , SISA96DN , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED .
History: SSF90R900S2
Keywords - SISA72DN MOSFET datasheet
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History: SSF90R900S2



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