All MOSFET. SISA72DN Datasheet

 

SISA72DN Datasheet and Replacement


   Type Designator: SISA72DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: POWERPAK-1212-8
 

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SISA72DN Datasheet (PDF)

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SISA72DN

SiSA72DNwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) f, g Qg (TYP.) 100 % Rg and UIS tested0.0035 at VGS = 10 V 6040 19.5 nC0.0048 at VGS = 4.5 V 60 Tuned for the lowest RDS-Qoss FOM Material categorization:for definitions of compliance please see P

Datasheet: SIRA84DP , SIRA88DP , SIRA96DP , SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , IRFB4227 , SISA88DN , SISA96DN , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED .

History: GP2M004A060XG | FHU630A | IRF7759L2TR1PBF | 2SK2252-01S | BL9N90-A | NP88N04MHE | DMJ7N70SK3

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