SISB46DN Datasheet. Specs and Replacement
Type Designator: SISB46DN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01171 Ohm
Package: POWERPAK-1212-8
SISB46DN substitution
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SISB46DN datasheet
sisb46dn.pdf
SiSB46DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) f Qg (TYP.) Tuned for the lowest RDS - Qoss FOM 0.01171 at VGS = 10 V 34 40 6.8 nC 100 % Rg and UIS tested 0.01580 at VGS = 4.5 V 29.4 Qgd / Qgs ratio ... See More ⇒
Detailed specifications: SIS472BDN, SIS488DN, SISA01DN, SISA24DN, SISA66DN, SISA72DN, SISA88DN, SISA96DN, 2N7000, SISS27ADN, SISS27DN, SISS98DN, SIUD402ED, SIUD403ED, SIUD412ED, SIZ320DT, SIZ322DT
Keywords - SISB46DN MOSFET specs
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History: GSM3458BW
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