SISB46DN Datasheet and Replacement
Type Designator: SISB46DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01171 Ohm
Package: POWERPAK-1212-8
SISB46DN substitution
SISB46DN Datasheet (PDF)
sisb46dn.pdf

SiSB46DNwww.vishay.comVishay SiliconixDual N-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () MAX. ID (A) f Qg (TYP.) Tuned for the lowest RDS - Qoss FOM0.01171 at VGS = 10 V 3440 6.8 nC 100 % Rg and UIS tested0.01580 at VGS = 4.5 V 29.4 Qgd / Qgs ratio
Datasheet: SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , SISA88DN , SISA96DN , IRFP250N , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT .
History: BRCS4407SC | UPA1919 | KMD6D0DN40Q | AP9468GS-HF | NCE40ND25Q | R6020FNX | AP4425GM
Keywords - SISB46DN MOSFET datasheet
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History: BRCS4407SC | UPA1919 | KMD6D0DN40Q | AP9468GS-HF | NCE40ND25Q | R6020FNX | AP4425GM



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