All MOSFET. SISB46DN Datasheet

 

SISB46DN Datasheet and Replacement


   Type Designator: SISB46DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01171 Ohm
   Package: POWERPAK-1212-8
 

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SISB46DN Datasheet (PDF)

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SISB46DN

SiSB46DNwww.vishay.comVishay SiliconixDual N-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () MAX. ID (A) f Qg (TYP.) Tuned for the lowest RDS - Qoss FOM0.01171 at VGS = 10 V 3440 6.8 nC 100 % Rg and UIS tested0.01580 at VGS = 4.5 V 29.4 Qgd / Qgs ratio

Datasheet: SIS472BDN , SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , SISA88DN , SISA96DN , IRF9540 , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT .

History: SFG170N10PF

Keywords - SISB46DN MOSFET datasheet

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