SISS27ADN Datasheet and Replacement
Type Designator: SISS27ADN
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id| ⓘ - Maximum Drain Current: 24.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 77.5 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 502 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
Package: POWERPAK-1212-8S
SISS27ADN substitution
SISS27ADN Datasheet (PDF)
siss27adn.pdf

SiSS27ADNwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8SD TrenchFET Gen III p-channel power MOSFETD8D7 Low thermal resistance PowerPAK packageD65 with small size and low 0.75 mm profile 100 % Rg and UIS tested Material categorization: for definitions of compliance please see12S www.vishay.com/doc?99912
siss27dn.pdf

SiSS27DNwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Low thermal resistance PowerPAK package 0.0056 at VGS = -10 V -50 ewith small size and low 0.75 mm profile-30 0.0070 at VGS = -6 V -50 e 45 nC 100 % Rg and UIS tested0.0090 at VGS = -4.5 V -50 e Mat
siss23dn.pdf

SiSS23DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Low Thermal Resistance PowerPAKPackage with Small Size and Low 0.75 mm 0.0045 at VGS = - 4.5 V - 50eProfile- 20 0.0063 at VGS = - 2.5 V - 50e 93 nC 100 % Rg and UIS Tested0.0115 at VGS = - 1.8 V - 50e Materia
Datasheet: SIS488DN , SISA01DN , SISA24DN , SISA66DN , SISA72DN , SISA88DN , SISA96DN , SISB46DN , IRFB4115 , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT , SIZ346DT .
History: SSF6114
Keywords - SISS27ADN MOSFET datasheet
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SISS27ADN lookup
SISS27ADN substitution
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History: SSF6114



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