SISS27DN Datasheet and Replacement
Type Designator: SISS27DN
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 530 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: POWERPAK-1212-8S
- MOSFET Cross-Reference Search
SISS27DN Datasheet (PDF)
siss27dn.pdf

SiSS27DNwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Low thermal resistance PowerPAK package 0.0056 at VGS = -10 V -50 ewith small size and low 0.75 mm profile-30 0.0070 at VGS = -6 V -50 e 45 nC 100 % Rg and UIS tested0.0090 at VGS = -4.5 V -50 e Mat
siss27adn.pdf

SiSS27ADNwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8SD TrenchFET Gen III p-channel power MOSFETD8D7 Low thermal resistance PowerPAK packageD65 with small size and low 0.75 mm profile 100 % Rg and UIS tested Material categorization: for definitions of compliance please see12S www.vishay.com/doc?99912
siss23dn.pdf

SiSS23DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Low Thermal Resistance PowerPAKPackage with Small Size and Low 0.75 mm 0.0045 at VGS = - 4.5 V - 50eProfile- 20 0.0063 at VGS = - 2.5 V - 50e 93 nC 100 % Rg and UIS Tested0.0115 at VGS = - 1.8 V - 50e Materia
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STH170N8F7-2 | CED05N8 | MC08N005C | AON6794 | AON6994 | IRLR024 | BL10N70-A
Keywords - SISS27DN MOSFET datasheet
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History: STH170N8F7-2 | CED05N8 | MC08N005C | AON6794 | AON6994 | IRLR024 | BL10N70-A



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