SISS27DN Datasheet. Specs and Replacement

Type Designator: SISS27DN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: POWERPAK-1212-8S

SISS27DN substitution

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SISS27DN datasheet

 ..1. Size:1423K  vishay
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SISS27DN

SiSS27DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Low thermal resistance PowerPAK package 0.0056 at VGS = -10 V -50 e with small size and low 0.75 mm profile -30 0.0070 at VGS = -6 V -50 e 45 nC 100 % Rg and UIS tested 0.0090 at VGS = -4.5 V -50 e Mat... See More ⇒

 8.1. Size:296K  vishay
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SISS27DN

SiSS27ADN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8S D TrenchFET Gen III p-channel power MOSFET D 8 D 7 Low thermal resistance PowerPAK package D 6 5 with small size and low 0.75 mm profile 100 % Rg and UIS tested Material categorization for definitions of compliance please see 1 2 S www.vishay.com/doc?99912... See More ⇒

 9.1. Size:261K  vishay
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SISS27DN

SiSS23DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Low Thermal Resistance PowerPAK Package with Small Size and Low 0.75 mm 0.0045 at VGS = - 4.5 V - 50e Profile - 20 0.0063 at VGS = - 2.5 V - 50e 93 nC 100 % Rg and UIS Tested 0.0115 at VGS = - 1.8 V - 50e Materia... See More ⇒

Detailed specifications: SISA01DN, SISA24DN, SISA66DN, SISA72DN, SISA88DN, SISA96DN, SISB46DN, SISS27ADN, 8205A, SISS98DN, SIUD402ED, SIUD403ED, SIUD412ED, SIZ320DT, SIZ322DT, SIZ346DT, SIZ988DT

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