SISS98DN Datasheet and Replacement
Type Designator: SISS98DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 57 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: POWERPAK-1212-8S
SISS98DN Datasheet (PDF)
siss98dn.pdf

SiSS98DNwww.vishay.comVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () (MAX.) ID (A) a Qg (TYP.) Optimized Qg and Qoss improve efficiency0.105 at VGS = 10 V 14.1200 9.3 nC0.110 at VGS = 7.5 V 13.8 100 % Rg and UIS tested Material categorization: for definitions of PowerPAK 1212-8Scompli
Datasheet: SISA24DN , SISA66DN , SISA72DN , SISA88DN , SISA96DN , SISB46DN , SISS27ADN , SISS27DN , STP75NF75 , SIUD402ED , SIUD403ED , SIUD412ED , SIZ320DT , SIZ322DT , SIZ346DT , SIZ988DT , SIZF914DT .
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