SISS98DN Datasheet. Specs and Replacement

Type Designator: SISS98DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: POWERPAK-1212-8S

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SISS98DN datasheet

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SISS98DN

SiSS98DN www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) (MAX.) ID (A) a Qg (TYP.) Optimized Qg and Qoss improve efficiency 0.105 at VGS = 10 V 14.1 200 9.3 nC 0.110 at VGS = 7.5 V 13.8 100 % Rg and UIS tested Material categorization for definitions of PowerPAK 1212-8S compli... See More ⇒

Detailed specifications: SISA24DN, SISA66DN, SISA72DN, SISA88DN, SISA96DN, SISB46DN, SISS27ADN, SISS27DN, 7N65, SIUD402ED, SIUD403ED, SIUD412ED, SIZ320DT, SIZ322DT, SIZ346DT, SIZ988DT, SIZF914DT

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