SIUD412ED Datasheet and Replacement
Type Designator: SIUD412ED
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: POWERPAK-0806
SIUD412ED substitution
SIUD412ED Datasheet (PDF)
siud412ed.pdf

SiUD412EDwww.vishay.comVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPowerPAK 0806 SingleD TrenchFET power MOSFET3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) 1.2 V rated RDS(on)1 100 % Rg testedG211 Material categorization: for definitions of complianceSTop View Bot
siud402ed.pdf

SiUD402EDwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 0806 Single TrenchFET power MOSFETD Ultra small 0.8 mm x 0.6 mm outline3 Ultra thin 0.4 mm max. height 100 % Rg tested Typical ESD protection 2000 V (HBM) Material categorization: for definitions of compliance1G please see www.vishay.com/doc?99912211SAP
siud403ed.pdf

SiUD403EDwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 0806 SingleD TrenchFET Gen III p-channel power MOSFET3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) -1.5 V rated RDS(ON)1 100% Rg testedG211 Material categorization: for definitions of complianc
Datasheet: SISA88DN , SISA96DN , SISB46DN , SISS27ADN , SISS27DN , SISS98DN , SIUD402ED , SIUD403ED , K3569 , SIZ320DT , SIZ322DT , SIZ346DT , SIZ988DT , SIZF914DT , SQ1421EDH , SQ1440EH , SQ1912EH .
History: NTGS3455T1 | AM1430N
Keywords - SIUD412ED MOSFET datasheet
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History: NTGS3455T1 | AM1430N



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