All MOSFET. SIUD412ED Datasheet

 

SIUD412ED Datasheet and Replacement


   Type Designator: SIUD412ED
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: POWERPAK-0806
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SIUD412ED Datasheet (PDF)

 ..1. Size:217K  vishay
 siud412ed.pdf pdf_icon

SIUD412ED

SiUD412EDwww.vishay.comVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPowerPAK 0806 SingleD TrenchFET power MOSFET3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) 1.2 V rated RDS(on)1 100 % Rg testedG211 Material categorization: for definitions of complianceSTop View Bot

 9.1. Size:217K  vishay
 siud402ed.pdf pdf_icon

SIUD412ED

SiUD402EDwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 0806 Single TrenchFET power MOSFETD Ultra small 0.8 mm x 0.6 mm outline3 Ultra thin 0.4 mm max. height 100 % Rg tested Typical ESD protection 2000 V (HBM) Material categorization: for definitions of compliance1G please see www.vishay.com/doc?99912211SAP

 9.2. Size:204K  vishay
 siud403ed.pdf pdf_icon

SIUD412ED

SiUD403EDwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPowerPAK 0806 SingleD TrenchFET Gen III p-channel power MOSFET3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1500 V (HBM) -1.5 V rated RDS(ON)1 100% Rg testedG211 Material categorization: for definitions of complianc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SM1A08NSV | AON6794 | IRFHM792PBF | BUZ84 | DMN2990UFA | CED05N8 | BL10N70-A

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