All MOSFET. SIZ346DT Datasheet

 

SIZ346DT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIZ346DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.6 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0285 Ohm
   Package: POWERPAIR3X3

 SIZ346DT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIZ346DT Datasheet (PDF)

 ..1. Size:380K  vishay
 siz346dt.pdf

SIZ346DT SIZ346DT

SiZ346DTwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETsFEATURESPowerPAIR 3 x 3G2S2 8 TrenchFET Gen IV power MOSFETsS2 7S2 6 100 % Rg and UIS tested5S1/D2 Optimized Qgs/Qgs ratio improves switching(Pin 9)D1 characteristics1 Material categorization:2G13D1 for definitions of compliance please see114D1www.vishay.co

 9.1. Size:362K  vishay
 siz340dt.pdf

SIZ346DT SIZ346DT

SiZ340DTwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY PowerPAIR Optimizes high-side andVDS (V) RDS(on) () MAX. ID (A) Qg (Typ.)low-side MOSFETs for synchronous buck 0.0095 at VGS = 10 V 30 a convertersChannel-1 30 5.6 nC0.0137 at VGS = 4.5 V 22 TrenchFET power Mosfets0.0051 at VGS = 10 V 100 % Rg and UIS tested

 9.2. Size:1261K  vishay
 siz342dt.pdf

SIZ346DT SIZ346DT

SiZ342DTwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY PowerPAIR optimizes high-side and low-side VDS (V) RDS(on) () MAX. ID (A) Qg (Typ.)MOSFETs for synchronous buck convertersChannel-1 0.0115 at VGS = 10 V 30 a TrenchFET Gen IV power MOSFETsand 30 4.5 nC0.0153 at VGS = 4.5 V 27.5Channel-2 100 % Rg and UIS tested

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