SQ3987EV Datasheet and Replacement
Type Designator: SQ3987EV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.133 Ohm
Package: TSOP-6
SQ3987EV substitution
SQ3987EV Datasheet (PDF)
sq3987ev.pdf

SQ3987EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please seewww.vishay.com/doc?999123G22S2S21S1G1Top ViewMarking code: 8XG2G1PRODUC
sq3985ev.pdf

SQ3985EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualifiedRDS(on) () at VGS = -4.5 V 0.145 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.200 Material categorization: RDS(on) () at VGS = -1.8 V 0.300for definitions of compliance please s
sq3989ev.pdf

SQ3989EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999123G22S1 S2S21G1Top ViewMarking Code: 9BG1 G2PRODUCT SU
Datasheet: SQ2361AEES , SQ3418AEEV , SQ3419AEEV , SQ3425EV , SQ3426AEEV , SQ3427AEEV , SQ3461EV , SQ3585EV , IRF530 , SQ3989EV , SQ4005EY , SQ4940AEY , SQ7414CENW , SQA401EJ , SQD40081EL , SQJ148EP , SQJ158EP .
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