All MOSFET. SQ3989EV Datasheet

 

SQ3989EV Datasheet and Replacement


   Type Designator: SQ3989EV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: TSOP-6
 

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SQ3989EV Datasheet (PDF)

 ..1. Size:226K  vishay
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SQ3989EV

SQ3989EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999123G22S1 S2S21G1Top ViewMarking Code: 9BG1 G2PRODUCT SU

 9.1. Size:230K  vishay
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SQ3989EV

SQ3985EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualifiedRDS(on) () at VGS = -4.5 V 0.145 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.200 Material categorization: RDS(on) () at VGS = -1.8 V 0.300for definitions of compliance please s

 9.2. Size:221K  vishay
 sq3987ev.pdf pdf_icon

SQ3989EV

SQ3987EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please seewww.vishay.com/doc?999123G22S2S21S1G1Top ViewMarking code: 8XG2G1PRODUC

Datasheet: SQ3418AEEV , SQ3419AEEV , SQ3425EV , SQ3426AEEV , SQ3427AEEV , SQ3461EV , SQ3585EV , SQ3987EV , AON7506 , SQ4005EY , SQ4940AEY , SQ7414CENW , SQA401EJ , SQD40081EL , SQJ148EP , SQJ158EP , SQJ200EP .

History: SQR50N03-06P | FMC06N60ES | CJ2303 | IRF6668PBF | IRLR8113 | FQP9N50C | MMFTN2302

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