SQ3989EV Datasheet. Specs and Replacement

Type Designator: SQ3989EV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: TSOP-6

SQ3989EV substitution

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SQ3989EV datasheet

 ..1. Size:226K  vishay
 sq3989ev.pdf pdf_icon

SQ3989EV

SQ3989EV www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES TSOP-6 Dual D2 TrenchFET power MOSFET 4 S1 AEC-Q101 qualified 5 D1 100 % Rg and UIS tested 6 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 3 G2 2 S1 S2 S2 1 G1 Top View Marking Code 9B G1 G2 PRODUCT SU... See More ⇒

 9.1. Size:230K  vishay
 sq3985ev.pdf pdf_icon

SQ3989EV

SQ3985EV www.vishay.com Vishay Siliconix Automotive Dual P-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -20 AEC-Q101 qualified RDS(on) ( ) at VGS = -4.5 V 0.145 100 % Rg and UIS tested RDS(on) ( ) at VGS = -2.5 V 0.200 Material categorization RDS(on) ( ) at VGS = -1.8 V 0.300 for definitions of compliance please s... See More ⇒

 9.2. Size:221K  vishay
 sq3987ev.pdf pdf_icon

SQ3989EV

SQ3987EV www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES TSOP-6 Dual D2 TrenchFET power MOSFET 4 S1 AEC-Q101 qualified 5 D1 100 % Rg and UIS tested 6 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 3 G2 2 S2 S2 1 S1 G1 Top View Marking code 8X G2 G1 PRODUC... See More ⇒

Detailed specifications: SQ3418AEEV, SQ3419AEEV, SQ3425EV, SQ3426AEEV, SQ3427AEEV, SQ3461EV, SQ3585EV, SQ3987EV, IRFB3607, SQ4005EY, SQ4940AEY, SQ7414CENW, SQA401EJ, SQD40081EL, SQJ148EP, SQJ158EP, SQJ200EP

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