SQ3989EV MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ3989EV
Marking Code: 9B
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 8.6 nC
trⓘ - Rise Time: 3 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: TSOP-6
SQ3989EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ3989EV Datasheet (PDF)
sq3989ev.pdf
SQ3989EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999123G22S1 S2S21G1Top ViewMarking Code: 9BG1 G2PRODUCT SU
sq3985ev.pdf
SQ3985EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualifiedRDS(on) () at VGS = -4.5 V 0.145 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.200 Material categorization: RDS(on) () at VGS = -1.8 V 0.300for definitions of compliance please s
sq3987ev.pdf
SQ3987EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please seewww.vishay.com/doc?999123G22S2S21S1G1Top ViewMarking code: 8XG2G1PRODUC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
