SQ4005EY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4005EY
Marking Code: Q4005
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 922 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SO-8
SQ4005EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4005EY Datasheet (PDF)
sq4005ey.pdf
SQ4005EYwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -12 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.016 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.022 Material categorization:ID (A) -15for definitions of compliance please seeConfiguration Single www
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SQD40N10-25
History: SQD40N10-25
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918