All MOSFET. SQ4005EY Datasheet

 

SQ4005EY Datasheet and Replacement


   Type Designator: SQ4005EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 922 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SO-8
 

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SQ4005EY Datasheet (PDF)

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SQ4005EY

SQ4005EYwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -12 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.016 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.022 Material categorization:ID (A) -15for definitions of compliance please seeConfiguration Single www

Datasheet: SQ3419AEEV , SQ3425EV , SQ3426AEEV , SQ3427AEEV , SQ3461EV , SQ3585EV , SQ3987EV , SQ3989EV , IRLZ44N , SQ4940AEY , SQ7414CENW , SQA401EJ , SQD40081EL , SQJ148EP , SQJ158EP , SQJ200EP , SQJ202EP .

History: APT12045L2VFR

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