All MOSFET. SQA401EJ Datasheet

 

SQA401EJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQA401EJ
   Marking Code: QB*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 13.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 3.75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 3.4 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT-363 SC-70-6

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SQA401EJ Datasheet (PDF)

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 sqa401ej.pdf

SQA401EJ SQA401EJ

SQA401EJwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURESPowerPAK SC-70-6L Single TrenchFET power MOSFETDD 6 AEC-Q101 qualified dS 54 100 % Rg and UIS tested Material categorization:for definitions of compliance please see www.vishay.com/doc?99912S172 DS3 D1GTop View Bottom ViewMark

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History: 2SK2081-01 | DMN601WK

 

 
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