All MOSFET. SQA401EJ Datasheet

 

SQA401EJ Datasheet and Replacement


   Type Designator: SQA401EJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 13.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT-363 SC-70-6
 

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SQA401EJ Datasheet (PDF)

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SQA401EJ

SQA401EJwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURESPowerPAK SC-70-6L Single TrenchFET power MOSFETDD 6 AEC-Q101 qualified dS 54 100 % Rg and UIS tested Material categorization:for definitions of compliance please see www.vishay.com/doc?99912S172 DS3 D1GTop View Bottom ViewMark

Datasheet: SQ3427AEEV , SQ3461EV , SQ3585EV , SQ3987EV , SQ3989EV , SQ4005EY , SQ4940AEY , SQ7414CENW , IRFP450 , SQD40081EL , SQJ148EP , SQJ158EP , SQJ200EP , SQJ202EP , SQJ260EP , SQJ262EP , SQJ407EP .

History: IPW50R199CP | IPU135N08N3G | SWU8N60D | SSP65R260S2E | IRF7809AVPBF | IPU090N03LG | IPP80N06S2L-05

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