SQD40081EL MOSFET. Datasheet pdf. Equivalent
Type Designator: SQD40081EL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 138 nC
trⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 576 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-252
SQD40081EL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQD40081EL Datasheet (PDF)
sqd40081el.pdf
SQD40081ELwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESTO-252TO TrenchFET power MOSFET Package with low thermal resistanceDrain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please see www.vishay.com/doc?99912SDSGTop ViewPRODUCT S
sqd40p10-40l.pdf
SQD40P10-40Lwww.vishay.comVishay SiliconixAutomotive P-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 100 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.040 Package with Low Thermal ResistanceRDS(on) () at VGS = - 4.5 V 0.048 AEC-Q101 QualifieddID (A) - 38 100 % Rg and
sqd40n10-25.pdf
SQD40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.029 AEC-Q101 QualifiedID (A) 40 Material categorization:Configuration Single
sqd40n06-14l.pdf
SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization:Configuration Single
sqd40n04-10a.pdf
SQD40N04-10Awww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 100 % Rg and UIS TestedConfiguration Single
sqd40n04.pdf
SQD40N04-10AVishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 AEC-Q101 QualifieddConfiguration Single Compliant to Ro
sqd40n06-14.pdf
SQD40N06-14www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
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