SQD40081EL Datasheet. Specs and Replacement

Type Designator: SQD40081EL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 81 nS

Cossⓘ - Output Capacitance: 576 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-252

SQD40081EL substitution

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SQD40081EL datasheet

 ..1. Size:235K  vishay
sqd40081el.pdf pdf_icon

SQD40081EL

SQD40081EL www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-252 TO TrenchFET power MOSFET Package with low thermal resistance Drain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S D S G Top View PRODUCT S... See More ⇒

 9.1. Size:171K  vishay
sqd40p10-40l.pdf pdf_icon

SQD40081EL

SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 100 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.040 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 4.5 V 0.048 AEC-Q101 Qualifiedd ID (A) - 38 100 % Rg and... See More ⇒

 9.2. Size:172K  vishay
sqd40n10-25.pdf pdf_icon

SQD40081EL

SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.029 AEC-Q101 Qualified ID (A) 40 Material categorization Configuration Single ... See More ⇒

 9.3. Size:170K  vishay
sqd40n06-14l.pdf pdf_icon

SQD40081EL

SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.014 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.017 100 % Rg and UIS Tested ID (A) 40 Material categorization Configuration Single ... See More ⇒

Detailed specifications: SQ3461EV, SQ3585EV, SQ3987EV, SQ3989EV, SQ4005EY, SQ4940AEY, SQ7414CENW, SQA401EJ, AON7506, SQJ148EP, SQJ158EP, SQJ200EP, SQJ202EP, SQJ260EP, SQJ262EP, SQJ407EP, SQJ409EP

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