SQJ158EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ158EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SO-8
SQJ158EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ158EP Datasheet (PDF)
..1. Size:216K vishay
sqj158ep.pdf
sqj158ep.pdf
SQJ158EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 60G
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