All MOSFET. SQJ158EP Datasheet

 

SQJ158EP Datasheet and Replacement


   Type Designator: SQJ158EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SO-8
 

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SQJ158EP Datasheet (PDF)

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SQJ158EP

SQJ158EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 60G

Datasheet: SQ3987EV , SQ3989EV , SQ4005EY , SQ4940AEY , SQ7414CENW , SQA401EJ , SQD40081EL , SQJ148EP , IRF1407 , SQJ200EP , SQJ202EP , SQJ260EP , SQJ262EP , SQJ407EP , SQJ409EP , SQJ414EP , SQJ416EP .

History: PSA06N70

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