SQJ158EP Datasheet. Specs and Replacement

Type Designator: SQJ158EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SO-8

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SQJ158EP datasheet

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SQJ158EP

SQJ158EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 S www.vishay.com/doc?99912 2 S 3 S 4 D 1 G Top View Bottom View PRODUCT SUMMARY VDS (V) 60 G... See More ⇒

Detailed specifications: SQ3987EV, SQ3989EV, SQ4005EY, SQ4940AEY, SQ7414CENW, SQA401EJ, SQD40081EL, SQJ148EP, IRFP450, SQJ200EP, SQJ202EP, SQJ260EP, SQJ262EP, SQJ407EP, SQJ409EP, SQJ414EP, SQJ416EP

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