SQJ418EP Datasheet. Specs and Replacement

Type Designator: SQJ418EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 889 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO-8

SQJ418EP substitution

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SQJ418EP datasheet

 ..1. Size:276K  vishay
 sqj418ep.pdf pdf_icon

SQJ418EP

SQJ418EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 100 AEC-Q101 qualified d RDS(on) ( ) at VGS = 10 V 0.014 100 % Rg and UIS tested ID (A) 48 Material categorization Configuration Single for definitions of compliance please see Package PowerPAK SO-8L www.vishay.com/... See More ⇒

 9.1. Size:154K  vishay
 sqj410ep.pdf pdf_icon

SQJ418EP

SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0039 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0042 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.... See More ⇒

 9.2. Size:267K  vishay
 sqj414ep.pdf pdf_icon

SQJ418EP

SQJ414EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 S www.vishay.com/doc?99912 2 S 3 S 4 D 1 G Top View Bottom View PRODUCT SUMMARY VDS (V) 30 G RDS... See More ⇒

 9.3. Size:155K  vishay
 sqj412ep.pdf pdf_icon

SQJ418EP

SQJ412EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0041 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0052 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.... See More ⇒

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Detailed specifications: SQJ200EP, SQJ202EP, SQJ260EP, SQJ262EP, SQJ407EP, SQJ409EP, SQJ414EP, SQJ416EP, 5N60, SQJ420EP, SQJ433EP, SQJ446EP, SQJ454EP, SQJ457EP, SQJ464EP, SQJ474EP, SQJ476EP

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