SQJ454EP Datasheet. Specs and Replacement

Type Designator: SQJ454EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 133 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: SO-8

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SQJ454EP datasheet

 ..1. Size:296K  vishay
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SQJ454EP

SQJ454EP www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 www.vishay.com/doc?99912 S 2 S 3 D S 4 1 G Top View Bottom View PRODUCT SUMMARY VDS (V) 200 G... See More ⇒

 9.1. Size:153K  vishay
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SQJ454EP

SQJ456EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( ) at VGS = 10 V 0.026 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 6 V 0.030 AEC-Q101 Qualifiedd ID (A) 32 100 % Rg and UIS Tested Configuration Single Compliant to RoHS ... See More ⇒

 9.2. Size:206K  vishay
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SQJ454EP

SQJ457EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 0.0250 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.0350 Material categorization ID (A) -36 for definitions of compliance please see Configuration Singl... See More ⇒

Detailed specifications: SQJ407EP, SQJ409EP, SQJ414EP, SQJ416EP, SQJ418EP, SQJ420EP, SQJ433EP, SQJ446EP, 18N50, SQJ457EP, SQJ464EP, SQJ474EP, SQJ476EP, SQJ479EP, SQJ570EP, SQJ860EP, SQJ868EP

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