SQJ454EP Datasheet and Replacement
Type Designator: SQJ454EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 133 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: SO-8
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SQJ454EP Datasheet (PDF)
sqj454ep.pdf

SQJ454EPwww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see 1www.vishay.com/doc?99912S2S3DS41 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 200G
sqj456ep.pdf

SQJ456EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) () at VGS = 10 V 0.026 TrenchFET Power MOSFETRDS(on) () at VGS = 6 V 0.030 AEC-Q101 QualifieddID (A) 32 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS
sqj457ep.pdf

SQJ457EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.0250 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0350 Material categorization:ID (A) -36for definitions of compliance please see Configuration Singl
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History: CEU840A | SM4186T9RL | WMM07N65C4 | G2302 | DMP57D5UFB | NCE30P12BS | APT10021JFLL
Keywords - SQJ454EP MOSFET datasheet
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History: CEU840A | SM4186T9RL | WMM07N65C4 | G2302 | DMP57D5UFB | NCE30P12BS | APT10021JFLL



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