SQJ457EP Datasheet. Specs and Replacement
Type Designator: SQJ457EP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SO-8
SQJ457EP substitution
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SQJ457EP datasheet
sqj457ep.pdf
SQJ457EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 0.0250 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.0350 Material categorization ID (A) -36 for definitions of compliance please see Configuration Singl... See More ⇒
sqj456ep.pdf
SQJ456EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( ) at VGS = 10 V 0.026 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 6 V 0.030 AEC-Q101 Qualifiedd ID (A) 32 100 % Rg and UIS Tested Configuration Single Compliant to RoHS ... See More ⇒
sqj454ep.pdf
SQJ454EP www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 www.vishay.com/doc?99912 S 2 S 3 D S 4 1 G Top View Bottom View PRODUCT SUMMARY VDS (V) 200 G... See More ⇒
Detailed specifications: SQJ409EP, SQJ414EP, SQJ416EP, SQJ418EP, SQJ420EP, SQJ433EP, SQJ446EP, SQJ454EP, 20N50, SQJ464EP, SQJ474EP, SQJ476EP, SQJ479EP, SQJ570EP, SQJ860EP, SQJ868EP, SQJ912BEP
Keywords - SQJ457EP MOSFET specs
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