SQJ479EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ479EP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SO-8
SQJ479EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ479EP Datasheet (PDF)
sqj479ep.pdf
SQJ479EPwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -80 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.033RDS(on) () at VGS = -4.5 V 0.044 100 % Rg and UIS testedID (A) -32 Material categorization:Configuration Singlefor definitions of compliance please see
sqj476ep.pdf
SQJ476EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.038 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.050 Material categorization:ID (A) 23for definitions of compliance please seeConfiguration Singlewww
sqj474ep.pdf
SQJ474EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.030 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.035 Material categorization:ID (A) 26for definitions of compliance please seeConfiguration Single www.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
