SQJ479EP Datasheet. Specs and Replacement

Type Designator: SQJ479EP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SO-8

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SQJ479EP datasheet

 ..1. Size:264K  vishay
 sqj479ep.pdf pdf_icon

SQJ479EP

SQJ479EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -80 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 0.033 RDS(on) ( ) at VGS = -4.5 V 0.044 100 % Rg and UIS tested ID (A) -32 Material categorization Configuration Single for definitions of compliance please see ... See More ⇒

 9.1. Size:290K  vishay
 sqj476ep.pdf pdf_icon

SQJ479EP

SQJ476EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 100 AEC-Q101 qualified d RDS(on) ( ) at VGS = 10 V 0.038 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.050 Material categorization ID (A) 23 for definitions of compliance please see Configuration Single www... See More ⇒

 9.2. Size:289K  vishay
 sqj474ep.pdf pdf_icon

SQJ479EP

SQJ474EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 100 AEC-Q101 qualified d RDS(on) ( ) at VGS = 10 V 0.030 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.035 Material categorization ID (A) 26 for definitions of compliance please see Configuration Single www.... See More ⇒

Detailed specifications: SQJ420EP, SQJ433EP, SQJ446EP, SQJ454EP, SQJ457EP, SQJ464EP, SQJ474EP, SQJ476EP, IRFZ24N, SQJ570EP, SQJ860EP, SQJ868EP, SQJ912BEP, SQJ914EP, SQJ946EP, SQJ956EP, SQJ958EP

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