All MOSFET. SQJ479EP Datasheet

 

SQJ479EP Datasheet and Replacement


   Type Designator: SQJ479EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 90 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SO-8
 
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SQJ479EP Datasheet (PDF)

 ..1. Size:264K  vishay
 sqj479ep.pdf pdf_icon

SQJ479EP

SQJ479EPwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -80 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.033RDS(on) () at VGS = -4.5 V 0.044 100 % Rg and UIS testedID (A) -32 Material categorization:Configuration Singlefor definitions of compliance please see

 9.1. Size:290K  vishay
 sqj476ep.pdf pdf_icon

SQJ479EP

SQJ476EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.038 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.050 Material categorization:ID (A) 23for definitions of compliance please seeConfiguration Singlewww

 9.2. Size:289K  vishay
 sqj474ep.pdf pdf_icon

SQJ479EP

SQJ474EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.030 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.035 Material categorization:ID (A) 26for definitions of compliance please seeConfiguration Single www.

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