SQJ914EP Datasheet. Specs and Replacement

Type Designator: SQJ914EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SO-8

SQJ914EP substitution

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SQJ914EP datasheet

 ..1. Size:265K  vishay
sqj914ep.pdf pdf_icon

SQJ914EP

SQJ914EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Material categorization D2 for definitions of compliance please see 1 S1 www.vishay.com/doc?99912 2 G1 3 S2 4 D1 D2 1 G2 1 Top View Bottom View PRODUCT SUMMA... See More ⇒

 9.1. Size:269K  vishay
sqj912bep.pdf pdf_icon

SQJ914EP

SQJ912BEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Material categorization D2 for definitions of compliance please see 1 S1 www.vishay.com/doc?99912 2 G1 3 S2 4 1 D1 1 G2 D2 Top View Bottom View PRODUCT SUMMARY ... See More ⇒

 9.2. Size:175K  vishay
sqj912ep.pdf pdf_icon

SQJ914EP

SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.014 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.015 100 % Rg and UIS Tested ID (A) per leg 8 Compliant to RoHS Directive 2002/95/EC Configurati... See More ⇒

 9.3. Size:167K  vishay
sqj910aep.pdf pdf_icon

SQJ914EP

SQJ910AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.007 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0086 Material categorization ID (A) per leg 30 For definitions of compliance please see Configura... See More ⇒

Detailed specifications: SQJ464EP, SQJ474EP, SQJ476EP, SQJ479EP, SQJ570EP, SQJ860EP, SQJ868EP, SQJ912BEP, AO3400A, SQJ946EP, SQJ956EP, SQJ958EP, SQJ990EP, SQJA00EP, SQJA02EP, SQJA04EP, SQJA06EP

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