SQJ956EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ956EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0267 Ohm
Package: SO-8
SQJ956EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ956EP Datasheet (PDF)
sqj956ep.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SQJ956EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0267 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0290 Material categorization: ID (A) per leg 23For definitions of compliance please see Configuration
sqj951ep.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SQJ951EPwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.017 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Dual Complia
sqj958ep.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SQJ958EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0349 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0385 Material categorization: ID (A) per leg 20For definitions of compliance please see Configuration
sqj952ep.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SQJ952EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.020 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.024 Material categorization:ID (A) per leg 23for definitions of compliance please see Configuratio
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .