SQJ956EP Datasheet. Specs and Replacement

Type Designator: SQJ956EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0267 Ohm

Package: SO-8

SQJ956EP substitution

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SQJ956EP datasheet

 ..1. Size:224K  vishay
sqj956ep.pdf pdf_icon

SQJ956EP

SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0267 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0290 Material categorization ID (A) per leg 23 For definitions of compliance please see Configuration ... See More ⇒

 9.1. Size:173K  vishay
sqj951ep.pdf pdf_icon

SQJ956EP

SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) ( ) at VGS = - 10 V 0.017 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 AEC-Q101 Qualifiedd ID (A) - 30 100 % Rg and UIS Tested Configuration Dual Complia... See More ⇒

 9.2. Size:225K  vishay
sqj958ep.pdf pdf_icon

SQJ956EP

SQJ958EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0349 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0385 Material categorization ID (A) per leg 20 For definitions of compliance please see Configuration ... See More ⇒

 9.3. Size:216K  vishay
sqj952ep.pdf pdf_icon

SQJ956EP

SQJ952EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.020 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.024 Material categorization ID (A) per leg 23 for definitions of compliance please see Configuratio... See More ⇒

Detailed specifications: SQJ476EP, SQJ479EP, SQJ570EP, SQJ860EP, SQJ868EP, SQJ912BEP, SQJ914EP, SQJ946EP, STP65NF06, SQJ958EP, SQJ990EP, SQJA00EP, SQJA02EP, SQJA04EP, SQJA06EP, SQJA20EP, SQJA60EP

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