SQJ956EP - параметры транзистора MOSFET, его аналоги, datasheet

SQJ956EP Datasheet (PDF)

..1. Size:224K vishay
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SQJ956EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0267 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0290 Material categorization: ID (A) per leg 23For definitions of compliance please see Configuration

9.1. Size:173K vishay
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SQJ951EPwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.017 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Dual Complia

9.2. Size:225K vishay
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SQJ958EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0349 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0385 Material categorization: ID (A) per leg 20For definitions of compliance please see Configuration

9.3. Size:216K vishay
sqj952ep.pdf pdf_icon

SQJ952EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.020 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.024 Material categorization:ID (A) per leg 23for definitions of compliance please see Configuratio

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