SQJ990EP Datasheet. Specs and Replacement

Type Designator: SQJ990EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO-8

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SQJ990EP datasheet

 ..1. Size:366K  vishay
 sqj990ep.pdf pdf_icon

SQJ990EP

SQJ990EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 100 V (D-S) 175 C MOSFETs FEATURESS PowerPAK SO-8L Dual Asymmetric TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Optimized for synchronous buck applications D2 Material categorization 1 for definitions of compliance please see S1 2 www.vishay.com/doc?99912 G1 ... See More ⇒

 9.1. Size:223K  vishay
 sqj992ep.pdf pdf_icon

SQJ990EP

SQJ992EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0562 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0745 Material categorization ID (A) per leg 8 for definitions of compliance please see Configuration D... See More ⇒

Detailed specifications: SQJ570EP, SQJ860EP, SQJ868EP, SQJ912BEP, SQJ914EP, SQJ946EP, SQJ956EP, SQJ958EP, 7N60, SQJA00EP, SQJA02EP, SQJA04EP, SQJA06EP, SQJA20EP, SQJA60EP, SQJA68EP, SQJA70EP

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