All MOSFET. SQJ990EP Datasheet

 

SQJ990EP Datasheet and Replacement


   Type Designator: SQJ990EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO-8
 

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SQJ990EP Datasheet (PDF)

 ..1. Size:366K  vishay
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SQJ990EP

SQJ990EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 100 V (D-S) 175 C MOSFETsFEATURESSPowerPAK SO-8L Dual Asymmetric TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Optimized for synchronous buck applicationsD2 Material categorization: 1for definitions of compliance please seeS12www.vishay.com/doc?99912G1

 9.1. Size:223K  vishay
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SQJ990EP

SQJ992EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0562 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0745 Material categorization: ID (A) per leg 8for definitions of compliance please see Configuration D

Datasheet: SQJ570EP , SQJ860EP , SQJ868EP , SQJ912BEP , SQJ914EP , SQJ946EP , SQJ956EP , SQJ958EP , MMIS60R580P , SQJA00EP , SQJA02EP , SQJA04EP , SQJA06EP , SQJA20EP , SQJA60EP , SQJA68EP , SQJA70EP .

History: BL4N80-P | IPG20N06S4-15

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