SQJA04EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJA04EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 68 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 35 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 1105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0062 Ohm
Package: SO-8
SQJA04EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJA04EP Datasheet (PDF)
sqja04ep.pdf
SQJA04EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 60
sqja02ep.pdf
SQJA02EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 60
sqja06ep.pdf
SQJA06EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 60RDS
sqja00ep.pdf
SQJA00EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1S www.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 60
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