All MOSFET. SQJA70EP Datasheet

 

SQJA70EP Datasheet and Replacement


   Type Designator: SQJA70EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: SO-8
 

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SQJA70EP Datasheet (PDF)

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SQJA70EP

SQJA70EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1S www.vishay.com/doc?999122S3S41 GDTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 100

Datasheet: SQJ990EP , SQJA00EP , SQJA02EP , SQJA04EP , SQJA06EP , SQJA20EP , SQJA60EP , SQJA68EP , IRF9640 , SQJA82EP , SQJA84EP , SQJA86EP , SQJA88EP , SQJA94EP , SQJA96EP , SQJB00EP , SQJB40EP .

History: 2SK1976 | 2SJ619 | 2SK1217 | LJ2015-53 | STP210N75F6 | 2SK790 | HSM4094

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