SQJA70EP Datasheet. Specs and Replacement
Type Designator: SQJA70EP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SO-8
SQJA70EP substitution
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SQJA70EP datasheet
sqja70ep.pdf
SQJA70EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 S www.vishay.com/doc?99912 2 S 3 S 4 1 G D Top View Bottom View PRODUCT SUMMARY G VDS (V) 100 ... See More ⇒
Detailed specifications: SQJ990EP, SQJA00EP, SQJA02EP, SQJA04EP, SQJA06EP, SQJA20EP, SQJA60EP, SQJA68EP, K2611, SQJA82EP, SQJA84EP, SQJA86EP, SQJA88EP, SQJA94EP, SQJA96EP, SQJB00EP, SQJB40EP
Keywords - SQJA70EP MOSFET specs
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History: SFW025N100I3
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