All MOSFET. SQJB00EP Datasheet

 

SQJB00EP Datasheet and Replacement


   Type Designator: SQJB00EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

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SQJB00EP Datasheet (PDF)

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SQJB00EP

SQJB00EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S24D1D211 G2Top View Bottom ViewPRODUCT SUMMARY

Datasheet: SQJA68EP , SQJA70EP , SQJA82EP , SQJA84EP , SQJA86EP , SQJA88EP , SQJA94EP , SQJA96EP , 5N50 , SQJB40EP , SQJB42EP , SQJB60EP , SQJB68EP , SQJB70EP , SQJB80EP , SQJB90EP , SQM50028EM .

History: HGS290N10SL | IRF9Z24

Keywords - SQJB00EP MOSFET datasheet

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