SQJB00EP Datasheet. Specs and Replacement

Type Designator: SQJB00EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SO-8

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SQJB00EP datasheet

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SQJB00EP

SQJB00EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Material categorization D2 for definitions of compliance please see 1 S1 www.vishay.com/doc?99912 2 G1 3 S2 4 D1 D2 1 1 G2 Top View Bottom View PRODUCT SUMMARY... See More ⇒

Detailed specifications: SQJA68EP, SQJA70EP, SQJA82EP, SQJA84EP, SQJA86EP, SQJA88EP, SQJA94EP, SQJA96EP, IRFP064N, SQJB40EP, SQJB42EP, SQJB60EP, SQJB68EP, SQJB70EP, SQJB80EP, SQJB90EP, SQM50028EM

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