SQJB68EP Datasheet. Specs and Replacement

Type Designator: SQJB68EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 118 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm

Package: SO-8

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SQJB68EP datasheet

 ..1. Size:283K  vishay
 sqjb68ep.pdf pdf_icon

SQJB68EP

SQJB68EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 100 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Material categorization D2 for definitions of compliance please see 1 S1 www.vishay.com/doc?99912 2 G1 3 S2 4 1 G2 1 D1 D2 Top View Bottom View PRODUCT SUMMA... See More ⇒

 9.1. Size:269K  vishay
 sqjb60ep.pdf pdf_icon

SQJB68EP

SQJB60EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Material categorization D2 for definitions of compliance please see 1 S1 www.vishay.com/doc?99912 2 G1 3 S2 4 1 D1 1 G2 D2 Top View Bottom View PRODUCT SUMMARY ... See More ⇒

Detailed specifications: SQJA86EP, SQJA88EP, SQJA94EP, SQJA96EP, SQJB00EP, SQJB40EP, SQJB42EP, SQJB60EP, IRF3205, SQJB70EP, SQJB80EP, SQJB90EP, SQM50028EM, SQM90142E, SQP90142E, SQS401ENW, SQS481ENW

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