All MOSFET. SQJB80EP Datasheet

 

SQJB80EP Datasheet and Replacement


   Type Designator: SQJB80EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SO-8
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SQJB80EP Datasheet (PDF)

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SQJB80EP

SQJB80EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see 1S1 www.vishay.com/doc?999122G13S24D1D211 G2Top View Bottom ViewPRODUCT SUM

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