All MOSFET. SQS481ENW Datasheet

 

SQS481ENW MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS481ENW

Marking Code: Q026

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 4.7 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 8 nC

Rise Time (tr): 2.3 nS

Drain-Source Capacitance (Cd): 18 pF

Maximum Drain-Source On-State Resistance (Rds): 1.095 Ohm

Package: POWERPAK-1212-8W

SQS481ENW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS481ENW Datasheet (PDF)

..1. sqs481enw.pdf Size:258K _vishay

SQS481ENW SQS481ENW

SQS481ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 150 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8DD AEC-Q101 qualified d77DD66 100 % Rg and UIS tested55 Material categorization:for definitions of compliance please seewww.vishay.com/doc?999121122SS33 SSS44SS1

9.1. sqs484en.pdf Size:561K _vishay

SQS481ENW SQS481ENW

SQS484ENwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.009 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.01 Material categorization:ID (A) 16For definitions of compliance please seeConfiguration Singlewww.vis

9.2. sqs482enw.pdf Size:226K _vishay

SQS481ENW SQS481ENW

SQS482ENWwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W SingleD TrenchFET power MOSFETD8DD7 AEC-Q101 qualified d7DD6655 100 % Rg and UIS tested Material categorization:for definitions of compliance please see www.vishay.com/doc?999121122SS33SSD44SS

 9.3. sqs482en.pdf Size:560K _vishay

SQS481ENW SQS481ENW

SQS482ENwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0085 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.01 Material categorization:ID (A) 16For definitions of compliance please seeConfiguration Singlewww.vi

9.4. sqs484enw.pdf Size:637K _vishay

SQS481ENW SQS481ENW

SQS484ENWwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8DD AEC-Q101 qualified77DD66 100 % Rg and UIS tested55 Material categorization:for definitions of compliance please see www.vishay.com/doc?999121122SS33 DSS44SS

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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