11NM70L-TMS2-T MOSFET. Datasheet pdf. Equivalent

   Type Designator: 11NM70L-TMS2-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-251S

11NM70L-TMS2-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

11NM70L-TMS2-T Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD 11NM70 Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conver

4.1. Size:240K utc
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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11NM70L-TMS2-T MOSFET. Datasheet pdf. Equivalent

11NM70L-TMS2-T Datasheet (PDF)

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