11NM70G-T2Q-T Specs and Replacement

Type Designator: 11NM70G-T2Q-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO-262

11NM70G-T2Q-T substitution

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11NM70G-T2Q-T datasheet

 ..1. Size:240K  utc
 11nm70l-tms2-t 11nm70g-tms2-t 11nm70l-tn3-r 11nm70g-tn3-r 11nm70l-t2q-t 11nm70g-t2q-t 11nm70l-t2s-t 11nm70g-t2s-t.pdf pdf_icon

11NM70G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 11NM70 Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conver... See More ⇒

 5.1. Size:240K  utc
 11nm70l-ta3-t 11nm70g-ta3-t 11nm70l-tf3-t 11nm70g-tf3-t 11nm70l-tf1-t 11nm70g-tf1-t 11nm70l-tm3-t 11nm70g-tm3-t.pdf pdf_icon

11NM70G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 11NM70 Power MOSFET 11A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 11NM70 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conver... See More ⇒

Detailed specifications: 11NM70G-TF1-T, 11NM70L-TM3-T, 11NM70G-TM3-T, 11NM70L-TMS2-T, 11NM70G-TMS2-T, 11NM70L-TN3-R, 11NM70G-TN3-R, 11NM70L-T2Q-T, 75N75, 11NM70L-T2S-T, 11NM70G-T2S-T, 12N10L-TA3-T, 12N10G-TA3-T, 12N10L-TM3-T, 12N10G-TM3-T, 12N10L-TN3-R, 12N10G-TN3-R

Keywords - 11NM70G-T2Q-T MOSFET specs

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