2SK2488 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK2488
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO3P

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2SK2488 Datasheet (PDF)

..1. Size:118K nec
2sk2488.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2488SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2488 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES4.7 MAX.15.7 MAX. 3.20.2 Low On-Resistance1.5RDS (on) = 1.2 (VGS = 10 V, ID = 5.0 A)4 Low Ciss Ciss = 2 90

8.1. Size:117K 1
2sk2480.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2480SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2480 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90

8.2. Size:118K nec
2sk2485.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2485SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2485 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 1 20

8.3. Size:115K nec
2sk2484.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2484SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2484 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES3.6 0.21.3 0.2 Low On-Resistance10.0RDS(on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ci

8.4. Size:117K nec
2sk2480.pdf pdf_icon

8.5. Size:66K nec
2sk2482.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2482SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2482 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-ResistanceRDS (on) = 4.0 (VGS = 10 V, ID = 3.0 A) 4 Low Ciss Ciss = 900 pF

8.6. Size:117K nec
2sk2486.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2486SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2486 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 2.0 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 1 830

8.7. Size:86K nec
2sk2483.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2483SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2483 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 2.8 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 1

8.8. Size:118K nec
2sk2487.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2487SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2487 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 2 100

8.9. Size:117K nec
2sk2481.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2481SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2481 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES 3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Cis

8.10. Size:405K shindengen
2sk2489.pdf pdf_icon

SHINDENGENVZ Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2489Case : STO-220(Unit : mm)( F10S18VZ )180V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION DC/DC converters Power supplies of DC 12-24V input Pr

8.11. Size:209K inchange semiconductor
2sk2485.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2485FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: 2SK2480 , 2SK2481 , 2SK2482 , 2SK2483 , 2SK2484 , 2SK2485 , 2SK2486 , 2SK2487 , 2SK3918 , 2SK2494-01 , 2SK2498 , 2SK2499 , 2SK2510 , 2SK2511 , 2SK2512 , 2SK2513 , 2SK2514 .

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2SK2488 MOSFET. Datasheet pdf. Equivalent

2SK2488 Datasheet (PDF)

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