STT03L06 MOSFET PDF: N-Ch, 60V, 3A. Full specification with pinout and replacement list

STT03L06 PDF Specs and Replacement

   Type Designator: STT03L06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A

Electrical Characteristics

   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223

STT03L06 substitution

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STT03L06 PDF Specs

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7.1. Size:134K samhop
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Green Product STT03L03 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 104 @ VGS=10V Surface Mount Package. 30V 3A 149 @ VGS=4.5V ESD Protected. D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM... See More ⇒

9.1. Size:134K samhop
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Green Product STT03N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 235 @ VGS=10V Surface Mount Package. 100V 2.5A 300 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2... See More ⇒

9.2. Size:127K samhop
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Green Product STT03N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 2.43 @ VGS=10V Surface Mount Package. 200V 0.7A 2.66 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA... See More ⇒

Detailed specifications: STT03N10 , FDD6685 , FDD6760A , FDD6770A , FDD6778A , FDD6780A , FDD6796A , FDD6N20TM , IRFP260N , FDD6N25 , FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H .